Hanyar shirya polysilicon.

1. Loading

Sanya ma'aunin ma'adini mai rufi a kan teburin musayar zafi, ƙara kayan albarkatun siliki, sa'an nan kuma shigar da kayan aiki na dumama, kayan aiki na rufi da murfin murhu, kwashe tanderun don rage matsa lamba a cikin tanderun zuwa 0.05-0.1mbar kuma kula da injin. Gabatar da argon a matsayin iskar kariya don kiyaye matsa lamba a cikin tanderun gaske a kusa da 400-600mbar.

2. Dumama

Yi amfani da hita graphite don dumama jikin tanderun, da farko ƙafe danshin da ke kan saman sassan graphite, rufin rufi, albarkatun siliki, da sauransu, sannan a hankali ya yi zafi don sanya zafin ma'aunin ma'adini ya kai kusan 1200-1300.℃. Wannan tsari yana ɗaukar 4-5h.

3. Narkewa

Gabatar da argon a matsayin iskar kariya don kiyaye matsa lamba a cikin tanderun gaske a kusa da 400-600mbar. A hankali ƙara ƙarfin dumama don daidaita yanayin zafi a cikin crucible zuwa kusan 1500℃, kuma albarkatun siliki sun fara narkewa. Rike kusan 1500℃a lokacin aikin narkewa har sai an gama narkewa. Wannan tsari yana ɗaukar kimanin sa'o'i 20-22.

4. Crystal girma

Bayan an narkar da albarkatun siliki, ƙarfin dumama yana raguwa don sanya yawan zafin jiki na crucible ya ragu zuwa kusan 1420-1440.℃, wanda shine wurin narkewar siliki. Sa'an nan kuma ma'adinan ma'adini a hankali yana motsawa zuwa ƙasa, ko kuma na'urar rufewa ta tashi a hankali, ta yadda ma'aunin quartz ya tashi a hankali ya bar yankin dumama kuma ya yi musayar zafi tare da kewaye; a lokaci guda, ruwa yana wucewa ta cikin farantin sanyi don rage yawan zafin jiki na narkewa daga ƙasa, kuma an fara samar da silicon crystalline a kasa. A yayin aiwatar da haɓaka, ƙaƙƙarfan mu'amala mai ƙarfi koyaushe yana kasancewa daidai da jirgin sama a kwance har sai an gama ci gaban crystal. Wannan tsari yana ɗaukar kimanin sa'o'i 20-22.

5. Annealing

Bayan an gama ci gaban kristal, saboda girman girman zafin jiki tsakanin ƙasa da saman kristal, damuwa na thermal na iya kasancewa a cikin ingot, wanda ke da sauƙin sake karyawa yayin dumama wafer silicon da shirye-shiryen baturi. . Sabili da haka, bayan an gama ci gaban kristal, ana adana ingot ɗin silicon kusa da wurin narkewa na tsawon sa'o'i 2-4 don sanya yanayin zafin silicon ingot uniform kuma ya rage damuwa na thermal.

6. Sanyi

Bayan an toshe silin ɗin a cikin tanderu, kashe wutar lantarki, ɗaga na'urar hana zafin zafi ko ƙasa da ingot ɗin silicon gaba ɗaya, sannan a shigar da babban iskar argon a cikin tanderun don rage zafin na'urar zuwa kusa. zafin dakin; a lokaci guda, iskar gas a cikin tanderun yana tashi a hankali har sai ya kai ga matsa lamba na yanayi. Wannan tsari yana ɗaukar kimanin sa'o'i 10.